| PART |
Description |
Maker |
| PI29FCT2520T PI29FCT520T PI29FCT521T |
FAST CMOS MULTILEVEL PIPELINE REGISTERS
|
Pericom Semiconductor Corporation
|
| AM29520A |
Multilevel Pipeline Registers
|
AMD
Advanced Micro Devices
|
| AM29C818ASC |
CMOS PIPELINE REGISTER WITH SSR DIAGNOSTICS
|
ADVANCED MICRO DEVICES INC
|
| AS7C33256PFS18A-166TQI AS7C33256PFS16A AS7C33256PF |
3.3V 256K x 16/18 pipeline burst synchronous SRAM
3.3V 256K×18 Ppipeline Burst Synchronous SRAM(3.3V 256K×18流水线脉冲同步静态RAM) 3.3 256K × 18 Ppipeline突发同步SRAM的电压（3.3V 256K × 18流水线脉冲同步静态内存）
3.3V 256K 】 16/18 pipeline burst synchronous SRAM
3.3V 256K x 16 pipeline burst synchronous SRAM, clock speed - 133MHz
3.3V 256K × 16/18 pipeline burst synchronous SRAM
|
Alliance Semiconductor, Corp.
ALSC[Alliance Semiconductor Corporation]
Alliance Semiconductor ...
|
| AS7C3256PFD18A-4TQC AS7C3256PFD16A-4TQC AS7C3256PF |
3.3V 256K x 16 pipeline burst synchronous SRAM, 150 MHz
3.3V 256K x 16 pipeline burst synchronous SRAM, 100 MHz
256K X 18 STANDARD SRAM, 4 ns, PQFP100 14 X 20 MM, TQFP-100
256K X 16 STANDARD SRAM, 4 ns, PQFP100 14 X 20 MM, TQFP-100
3.3V 256K x 16/18 pipeline burst synchronous SRAM
3.3V 256K x 18 pipeline burst synchronous SRAM, 166 MHz
3.3V 256K x 18 pipeline burst synchronous SRAM, 150 MHz
3.3V 256K x 18 pipeline burst synchronous SRAM, 133 MHz
3.3V 256K x 18 pipeline burst synchronous SRAM, 100 MHz
3.3V 256K x 16 pipeline burst synchronous SRAM, 133 MHz
3.3V 256K x 16 pipeline burst synchronous SRAM, 166MHz
|
Alliance Semiconductor, Corp.
|
| NB6L11 NB6L11DTR2 NB6L11D NB6L11DR2 NB6L11DT |
2.5V / 3.3V MULTILEVEL INPUT TO DIFFERENTIAL LVPECL/LVNECL 1:2 CLOCK OR DATA FANOUT BUFFER / TRANSLATOR 6L SERIES, LOW SKEW CLOCK DRIVER, 2 TRUE OUTPUT(S), 0 INVERTED OUTPUT(S), PDSO8
6GHz 2.5V/3.3V Multilevel Input to Differential LVNECL/LVPECL 1:2 Clock or Data Fanout Buffer/Transl
From old datasheet system
|
ONSEMI[ON Semiconductor]
|
| GM71C17800C GM71C17800C-5 GM71C17800C-7 GM71C17800 |
x8 Fast Page Mode DRAM 2M X 8 FAST PAGE DRAM, 60 ns, PDSO28
x8 Fast Page Mode DRAM 2M X 8 FAST PAGE DRAM, 50 ns, PDSO28
2,097,152 WORDS x 8 BIT CMOS DYNAMIC RAM 2M X 8 FAST PAGE DRAM, 50 ns, PDSO28
x8 Fast Page Mode DRAM 2M X 8 FAST PAGE DRAM, 70 ns, PDSO28
2Mx8|5V|2K|5/6|FP/EDO DRAM - 16M
IC LOGIC 1G125 SINGLE BUS BUFFER GATE WITH 3-STATE OUTPUTS -40 85C SOT-23-5 3000/REEL
2/097/152 WORDS x 8 BIT CMOS DYNAMIC RAM
|
Hynix Semiconductor, Inc.
Hynix Semiconductor Inc.
|
| KM44C256C KM44C256C-6 KM44C256C-7 KM44C256C-8 KM44 |
256k x 4Bit CMOS DRAM with Fast Page Mode
256 x 4 Bit CMOS Dynamic RAM with Fast Page Mode
|
Samsung Electronics
Samsung semiconductor
|
| MB814100C-60 MB814100C-70 |
CMOS 4 M ×1 BIT
Fast Page Mode DRAM(CMOS 4 M ×1 位快速页面存取模式动态RAM)
CMOS 4 M ×1 BIT
Fast Page Mode DRAM(CMOS 4 M ×1位快速页面存取模式动态RAM)
|
Fujitsu Limited
|
| IDT74FCT138 IDT74FCT138A IDT74FCT138AD IDT74FCT138 |
FAST CMOS 1-OF-8 DECODER WITH ENABLE 快速CMOS 1 - 8解码器，使能
CA-BAYONET 快速CMOS 1 - 8解码器，使能
FAST CMOS 1-OF-8 DECODER WITH ENABLE FCT SERIES, OTHER DECODER/DRIVER, INVERTED OUTPUT, PDSO16
CAPACITOR CER CHIP 10PF 50V
|
IDT
Integrated Device Technology, Inc.
|
